4 W Highly Linear and Reliable GaN Power Amplifier for C-Band Applications
Paper i proceeding, 2015
A C-band GaN amplifier is reported. The design method is focused on high linearity load optimization and use of non-linear transistor models to predict harmonic generation and intermodulation products. The amplifier is characterized in terms of S-parameters, single tone and two tone output power. The measured small signal gain is 24.6 dB. The 1 dB compression point is measured at 36 dBm and the output third order intercept point (OIP3) is above 45 dBm. The power consumption is 10.7 W, the channel temperature 205 degrees C at drain bias 15 V avoiding stress on the device for reliable operation.