4 W Highly Linear and Reliable GaN Power Amplifier for C-Band Applications
Paper i proceeding, 2015

A C-band GaN amplifier is reported. The design method is focused on high linearity load optimization and use of non-linear transistor models to predict harmonic generation and intermodulation products. The amplifier is characterized in terms of S-parameters, single tone and two tone output power. The measured small signal gain is 24.6 dB. The 1 dB compression point is measured at 36 dBm and the output third order intercept point (OIP3) is above 45 dBm. The power consumption is 10.7 W, the channel temperature 205 degrees C at drain bias 15 V avoiding stress on the device for reliable operation.

Författare

Oliver Silva Barrera

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Asia-Pacific Microwave Conference, APMC 2015; Jinling HotelNanjing; China; 6 December 2015 through 9 December 2015

Vol. 3 Art. no. 7413430-

Ämneskategorier

Telekommunikation

DOI

10.1109/APMC.2015.7413430

ISBN

978-1-4799-8767-2