4 W Highly Linear and Reliable GaN Power Amplifier for C-Band Applications
Paper i proceeding, 2015
A C-band GaN amplifier is reported. The design method is focused on high linearity load optimization and use of non-linear transistor models to predict harmonic generation and intermodulation products. The amplifier is characterized in terms of S-parameters, single tone and two tone output power. The measured small signal gain is 24.6 dB. The 1 dB compression point is measured at 36 dBm and the output third order intercept point (OIP3) is above 45 dBm. The power consumption is 10.7 W, the channel temperature 205 degrees C at drain bias 15 V avoiding stress on the device for reliable operation.
Författare
Oliver Silva Barrera
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Iltcho Angelov
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Asia-Pacific Microwave Conference, APMC 2015; Jinling HotelNanjing; China; 6 December 2015 through 9 December 2015
Vol. 3 Art. no. 7413430-
978-1-4799-8767-2 (ISBN)
Ämneskategorier
Telekommunikation
DOI
10.1109/APMC.2015.7413430
ISBN
978-1-4799-8767-2