Influence of the channel width on the threshold voltage modulation in MOSFETs
Artikel i vetenskaplig tidskrift, 1975

The threshold voltage of an MOS field-effect transistor is modulated by the source-to-substrate reverse bias. In the letter, the theory for long- and short-channel transistors is extended to include the influence of the channel width. The result is an analytical expression for the threshold voltage as a function of geometry and bias that agrees well with experimental data.

threshold voltage modulation


Field-effect transistors

channel width


Kjell Jeppson

Institutionen för mikroelektronik och nanovetenskap

Electronics Letters

0013-5194 (ISSN) 1350-911X (eISSN)

Vol. 11 14 297-299


Nanovetenskap och nanoteknik (SO 2010-2017, EI 2018-)


Elektroteknik och elektronik

Mer information

Senast uppdaterat