Influence of the channel width on the threshold voltage modulation in MOSFETs

Artikel i vetenskaplig tidskrift, 1975

The threshold voltage of an MOS field-effect transistor is modulated by the source-to-substrate reverse bias. In the letter, the theory for long- and short-channel transistors is extended to include the influence of the channel width. The result is an analytical expression for the threshold voltage as a function of geometry and bias that agrees well with experimental data.