Influence of the channel width on the threshold voltage modulation in MOSFETs
Artikel i vetenskaplig tidskrift, 1975

The threshold voltage of an MOS field-effect transistor is modulated by the source-to-substrate reverse bias. In the letter, the theory for long- and short-channel transistors is extended to include the influence of the channel width. The result is an analytical expression for the threshold voltage as a function of geometry and bias that agrees well with experimental data.

threshold voltage modulation


channel width

Field-effect transistors


Kjell Jeppson

Institutionen för mikroelektronik och nanovetenskap

Electronics Letters

0013-5194 (ISSN) 1350-911X (eISSN)

Vol. 11 297-299


Nanovetenskap och nanoteknik


Elektroteknik och elektronik