A direct method to extract effective geometries and series resistances of MOS transistors
Paper i proceeding, 1994
A new direct method for rapid characterization of MOS transistor effective geometries and series resistances is presented. The method only requires devices of four different sizes. Also presented is a new linear regression technique that offers a natural extension of the method to any arbitrary number of devices. Finally, the channel width dependence of the mobility reduction factor is shown to be explained by the electrical broadening of the channel.
Circuit synthesis
Optimization methods
Linear regression
Condition monitoring
SPICE
Solid state circuits
Electric resistance
MOSFETs
Geometry
Threshold voltage
Författare
Peter R. Karlsson
Institutionen för fasta tillståndets elektronik
Kjell Jeppson
Institutionen för fasta tillståndets elektronik
Institutionen för mikroelektronik och nanovetenskap
Proceedings of the International Conference on Microelectronic Test Structures ICMTS
Vol. 1994 22-25 March 1994
0-7803-1757-2 (ISBN)
Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/ICMTS.1994.303479