High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide
Artikel i vetenskaplig tidskrift, 2017

The high-frequency performance of transistors is usually assessed by speed and gain figures of merit, such as the maximum oscillation frequency f(max), cutoff frequency f(T), ratio f(max)/f(T), forward transmission coefficient S-21, and open-circuit voltage gain A(v). All these figures of merit must be as large as possible for transistors to be useful in practical electronics applications. Here we demonstrate high-performance graphene field-effect transistors (GFETs) with a thin AlOx gate dielectric which outperform previous state-of-the-art GFETs: we obtained f(max)/f(T) > 3, A(v) > 30 dB, and S-21 = 12.5 dB (at 10 MHz and depending on the transistor geometry) from S-parameter measurements. A dc characterization of GFETs in ambient conditions reveals good current saturation and relatively large transconductance similar to 600 S/m. The realized GFETs offer the prospect of using graphene in a much wider range of electronic applications which require substantial gain.

Författare

E. Guerriero

Politecnico di Milano

P. Pedrinazzi

Politecnico di Milano

A. Mansouri

Politecnico di Milano

Omid Habibpour

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Michael Winters

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Niklas Rorsman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

A. Behnam

University of Illinois

E. A. Carrion

University of Illinois

A. Pesquera

Graphenea SA

A. Centeno

Graphenea SA

A. Zurutuza

Graphenea SA

E. Pop

Stanford University

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

R. Sordan

Politecnico di Milano

Scientific Reports

2045-2322 (ISSN)

Vol. 7 1 Article Number: 2419- 2419

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1038/s41598-017-02541-2

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Senast uppdaterat

2018-09-06