Combined empirical and look-up table approach for non-quasi-static modelling of GaN HEMTs
Paper i proceeding, 2009

In this paper the empirical and the look-up table approaches are combined to accurately model a gallium nitride based HEMT on silicon carbide. That solution allows to exploit the advantages of both approaches. The validity of the extracted model is verified by comparing model simulations with DC and microwave measurements.

HEMT

Semiconductor device modeling

Empirical model

Look-up table model

Författare

G. Crupi

Universita degli Studi di Messina

Dominique Schreurs

KU Leuven

A. Caddemi

Universita degli Studi di Messina

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Rui Liu

KU Leuven

Interuniversity Micro-Electronics Center at Leuven

Marianne Germain

Interuniversity Micro-Electronics Center at Leuven

Walter De Raedt

Interuniversity Micro-Electronics Center at Leuven

9th International Conference on Telecommunications in Modern Satellite, Cable, and Broadcasting Services, TELSIKS 2009 - Proceedings of Paper

40-43 5339496

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/TELSKS.2009.5339496

ISBN

978-142444383-3

Mer information

Senast uppdaterat

2018-05-29