A Surface Potential Model for Predicting Substrate Noise Coupling in Integrated Circuits
Paper i proceeding, 2004
In integrated circuits, it must be verified that noise injected and transmitted through the substrate does not degrade the performance of sensitive circuitry present on the chip. In this paper, we present a simple analytic substrate model for evaluating substrate noise coupling. The model handles an arbitrary number of aggressor and victim devices as well as biased and floating chip backside. The model has been validated by measurements on test structures manufactured in a 0.35 /spl mu/m CMOS process, and it is shown that the model gives an accurate description of the substrate noise coupling. For example, the noise suppressing properties of guard rings have been evaluated.
interference suppression
0.35 micron
integrated circuit modelling
surface potential
integrated circuit noise
CMOS
substrate injected noise
substrate transmitted noise
surface potential model
aggressor devices
guard rings noise suppressing properties
victim devices
biased chip backside
CMOS integrated circuits
IC substrate noise coupling
coupled circuits
floating chip backside
Författare
Simon Kristiansson
Chalmers, Mikroteknologi och nanovetenskap, Fasta tillståndets elektronik
Fredrik Ingvarson
Chalmers, Mikroteknologi och nanovetenskap, Fasta tillståndets elektronik
Shiva P. Kagganti
Chalmers, Mikroteknologi och nanovetenskap, Fasta tillståndets elektronik
Kjell Jeppson
Chalmers, Mikroteknologi och nanovetenskap, Fasta tillståndets elektronik
Proceedings of the IEEE 2004 Custom Integrated Circuits Conference, CICC; Orlando, FL; United States; 3 October 2004 through 6 October 2004
0886-5930 (ISSN)
497-500Ämneskategorier
Elektroteknik och elektronik