Silicon integrated 850-nm hybrid vertical-cavity laser for life science applications
Paper i proceeding, 2017
As a first step in realizing short-wavelength hybrid VCLs with in-plane emission coupled to a SiN waveguide, we have developed a technique to produce high performance 850-nm hybrid VCLs with out-of-plane emission. It is based on adhesive bonding of epitaxial AlGaAs-material onto a dielectric distributed Bragg reflector (DBR) on silicon [6-8]. We have fabricated devices with surface emission having sub-mA threshold current, >2 mW output power, and 25 Gbit/s modulation speed [8].
To be able to demonstrate in-plane emission with SiN waveguide coupling from our hybrid 850-nm VCLs, our next step is to add a SiN waveguide structure with embossed grating on top of the dielectric DBR, before adhesively bonding the AlGaAs-material. So far, based on numerical simulations, we have designed a device that is predicted to yield a slope efficiency of ~0.3 W/A at 25 °C for the light coupled to a single-mode waveguide, while maintaining a sub-mA threshold current for the lasing [9].
This work is supported by the European Union’s Horizon 2020 research and innovation program under grant agreement no. 688519 (PIX4life), the Swedish Foundation for Strategic Research (SSF), and the European FP7-ERC-InSpectra Advanced Grant.
References
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[6] E.P. Haglund et al., Opt. Express, vol. 23, no. 26, p. 33634, 2015.
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[8] E.P. Haglund et al., IEEE J. Sel. Top. Quantum Electron., vol. 23, no. 6, p. 1700109, 2017.
[9] S. Kumari et al., Submitted to IEEE Photon. J.,2017.
Författare
Johan Gustavsson
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Sulakshna Kumari
Universiteit Gent
Emanuel Haglund
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Jörgen Bengtsson
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Gunther Roelkens
Universiteit Gent
Roel G. Baets
Universiteit Gent
Anders Larsson
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
VCSEL Day 2017
Cardiff, Wales, United Kingdom,
Ämneskategorier
Nanoteknik