A Directly Matched PA-Integrated K-band Antenna for Efficient mm-Wave High-Power Generation
Artikel i vetenskaplig tidskrift, 2019

A K-band slot antenna element with integrated GaN (Gallium nitride) power amplifier (PA) is presented. It has been optimized through a circuit-EM co-design methodology to directly match the transistor drain output to its optimal load impedance ( Zopt=17+j46Ω ) while accounting for the over-the-air coupling effects in the vicinity of the transition between the PA and antenna. This obviates the need for using a potentially lossy and bandwidth-limiting output impedance matching network. The measured PA-integrated antenna gain of 15 dBi with a 40% total efficiency at 28 dBm output power agrees well with the theoretically achievable performance targets. The proposed element is compact ( 0.6×0.5×0.3 λ3 ), and thus well-suited to meet the high-performance demands of future emerging beamforming active antenna array applications.

millimeter-wave antennas

power amplifiers

gallium nitride (GaN)

active integrated antennas

antenna-circuit co-design

K-band

antenna array element

Författare

Wan-Chun Liao

Chalmers, Elektroteknik, Kommunikations- och antennsystem, Antennsystem

Rob Maaskant

Chalmers, Elektroteknik, Kommunikations- och antennsystem

Thomas Emanuelsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Vessen Vassilev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Oleg Iupikov

Chalmers, Elektroteknik, Kommunikations- och antennsystem, Antennsystem

Marianna Ivashina

Chalmers, Elektroteknik, Kommunikations- och antennsystem, Antennsystem

IEEE Antennas and Wireless Propagation Letters

1536-1225 (ISSN)

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Telekommunikation

Kommunikationssystem

Annan elektroteknik och elektronik

DOI

10.1109/LAWP.2019.2937235

Mer information

Skapat

2019-08-25