Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor
Övrig text i vetenskaplig tidskrift, 2020
Plasma waves play an important role in many solid-state phenomena and devices. They also become significant in electronic device structures as the operation frequencies of these devices increase. A prominent example is field-effect transistors (FETs), that witness increased attention for application as rectifying detectors and mixers of electromagnetic waves at gigahertz and terahertz frequencies, where they exhibit very good sensitivity even high above the cut-off frequency defined by the carrier transit time. Transport theory predicts that the coupling of radiation at THz frequencies into the channel of an antenna-coupled FET leads to the development of a gated plasma wave, collectively involving the charge carriers of both the two-dimensional electron gas and the gate electrode. In this paper, we present the first direct visualization of these waves. Employing graphene FETs containing a buried gate electrode, we utilize near-field THz nanoscopy at room temperature to directly probe the envelope function of the electric field amplitude on the exposed graphene sheet and the neighboring antenna regions. Mapping of the field distribution documents that wave injection is unidirectional from the source side since the oscillating electrical potentials on the gate and drain are equalized by capacitive shunting. The plasma waves, excited at 2 THz, are overdamped, and their decay time lies in the range of 25–70 fs. Despite this short decay time, the decay length is rather long, i.e., 0.3-0.5 μm, because of the rather large propagation speed of the plasma waves, which is found to lie in the range of 3.5–7 × 10^6 m/s, in good agreement with theory. The propagation speed depends only weakly on the gate voltage swing and is consistent with the theoretically predicted 1414 power law.
Författare
Amin Soltani
Johann Wolfgang Goethe Universität Frankfurt am Main
Frederik Kuschewski
Technische Universität Dresden
Marlene Bonmann
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Andrey Generalov
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Aalto-Yliopisto
Andrei Vorobiev
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Florian Ludwig
Johann Wolfgang Goethe Universität Frankfurt am Main
Matthias M. Wiecha
Johann Wolfgang Goethe Universität Frankfurt am Main
Dovilė Čibiraitė
Johann Wolfgang Goethe Universität Frankfurt am Main
Frederik Walla
Johann Wolfgang Goethe Universität Frankfurt am Main
Stephan Winnerl
Helmholtz
Susanne C. Kehr
Technische Universität Dresden
Lukas M. Eng
Technische Universität Dresden
Complexity and Topology in Quantum Matter (CT.QMAT)
Jan Stake
Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik
Hartmut G. Roskos
Johann Wolfgang Goethe Universität Frankfurt am Main
Light: Science and Applications
20955545 (ISSN) 2047-7538 (eISSN)
Vol. 9 1 97Flexibla terahertz detektorer i grafen
Vetenskapsrådet (VR) (2017-04504), 2018-01-01 -- 2021-12-31.
Styrkeområden
Informations- och kommunikationsteknik
Nanovetenskap och nanoteknik
Fundament
Grundläggande vetenskaper
Ämneskategorier
Atom- och molekylfysik och optik
Annan fysik
Nanoteknik
Fusion, plasma och rymdfysik
Annan elektroteknik och elektronik
Infrastruktur
Nanotekniklaboratoriet
DOI
10.1038/s41377-020-0321-0
PubMed
32549977