Nonlinear active device modeling
Kapitel i bok, 2019

The chapter covers main characteristics of the devices used in power amplifiers (PAs) and provides basic knowledge about the specifications of these devices and the transistor models that are used in PA designs. The Preface covers the basic characteristics of main semiconductor device types used in PA designs. These devices have been in use for many decades, the technology of which is well established and its production is repeatable with high yield. Now, these devices show really impressive results. They work up to the terahertz region and can deliver kilowatts of power at low radio frequencies (RF). Probably one of the most promising devices now is the GaN high-electron-mobility transistor (HEMT), and they yield high-power and high-frequency results in number of applications. There are a plenty number of literature on these devices regarding how to design PA, and using these transistors has put a tremendous success in its field. A very small part of these references is listed here. The models come in small signal (SS), large signal (LS) categories, and for all these devices, extraction procedures, software is available.

Författare

Iltcho Angelov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Mattias Thorsell

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik, Mikrovågselektronik

Radio Frequency and Microwave Power Amplifiers. Volume 1: Principles, Device Modeling and Matching Networks

73-165

Ämneskategorier

Övrig annan teknik

Medicinsk apparatteknik

Annan elektroteknik och elektronik

DOI

10.1049/PBCS071F_ch

Mer information

Skapat

2020-12-08