High-speed, low-noise thermoelectric graphene detectors at terahertz frequencies
Paper i proceeding, 2020

We report room temperature terahertz detection in hBN/graphene/hBN heterostructures, integrated in top-gated field effect transistors. The record combination of high-speed (response time < 1 ns) and high sensitivity (noise equivalent power ~ 100 pWHz-1I2) is enabled by the photo-thermoelectric effect and paves the way for the design of ultrafast graphene arrays in the far infrared, opening concrete perspectives for targeting ultrafast applications.

Författare

Leonardo Viti

NEST

Alisson R. Cadore

University of Cambridge

David G. Purdie

University of Cambridge

Jakob E. Muench

University of Cambridge

Xinxin Yang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Kenji Watanabe

National Institute for Materials Science (NIMS)

Takashi Taniguchi

National Institute for Materials Science (NIMS)

Andrei Vorobiev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik

Antonio Lombardo

University of Cambridge

Andrea C. Ferrari

University of Cambridge

Miriam S. Vitiello

NEST

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

21622027 (ISSN) 21622035 (eISSN)

2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Buffalo, NY, USA,

Infrastruktur

Kollberglaboratoriet

Nanotekniklaboratoriet

Ämneskategorier

Nanoteknik

Annan elektroteknik och elektronik

DOI

10.1109/IRMMW-THz46771.2020.9370662

Mer information

Skapat

2021-03-12