Wideband integrated circuits for optical communication systems
Doktorsavhandling, 2021

The exponential growth of internet traffic drives datacenters to constantly improvetheir capacity. Several research and industrial organizations are aiming towardsTbps Ethernet and beyond, which brings new challenges to the field of high-speedbroadband electronic circuit design. With datacenters rapidly becoming significantenergy consumers on the global scale, the energy efficiency of the optical interconnecttransceivers takes a primary role in the development of novel systems. Furthermore,wideband optical links are finding application inside very high throughput satellite(V/HTS) payloads used in the ever-expanding cloud of telecommunication satellites,enabled by the maturity of the existing fiber based optical links and the hightechnology readiness level of radiation hardened integrated circuit processes. Thereare several additional challenges unique in the design of a wideband optical system.The overall system noise must be optimized for the specific application, modulationscheme, PD and laser characteristics. Most state-of-the-art wideband circuits are builton high-end semiconductor SiGe and InP technologies. However, each technologydemands specific design decisions to be made in order to get low noise, high energyefficiency and adequate bandwidth. In order to overcome the frequency limitationsof the optoelectronic components, bandwidth enhancement and channel equalizationtechniques are used. In this work various blocks of optical communication systems aredesigned attempting to tackle some of the aforementioned challenges. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback,are designed and measured, utilizing a state-of-the-art 130 nm InP DHBT technology.A modular equalizer block built in 130 nm SiGe HBT technology is presented. Threeultra-wideband traveling wave amplifiers, a 4-cell, a single cell and a matrix single-stage, are designed in a 250 nm InP DHBT process to test the limits of distributedamplification. A differential VCSEL driver circuit is designed and integrated in a4x 28 Gbps transceiver system for intra-satellite optical communications based in arad-hard 130nm SiGe process.

optical interconnects



VCSEL driver

wideband amplifiers

data communication



distributed amplifiers.

Online. In order to join the meeting enter these numbers: 845031
Opponent: Professor Jim Buckwalter, University of California, Santa Barbara, USA


Stavros Giannakopoulos

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Transimpedance amplifiers with 133 GHz bandwidth on 130 nm indium phosphide double heterojunction bipolar transistors

Electronics Letters,; Vol. 55(2019)p. 521-522

Artikel i vetenskaplig tidskrift

Ultra-broadband common collector-cascode 4-cell distributed amplifier in 250nm InP HBT technology with over 200 GHz bandwidth

Microwave Integrated Circuits Conference (EuMIC), 2017 12th European,; (2017)

Paper i proceeding

InP DHBT Single-Stage and Multiplicative Distributed Amplifiers for Ultra-Wideband Amplification

IEEE Transactions on Circuits and Systems I: Regular Papers,; Vol. 67(2020)p. 3804-3814

Artikel i vetenskaplig tidskrift

A 112 Gb/s radiation-hard mid-board optical transceiver in 130 nm SiGe BiCMOS for intra-satellite links

Frontiers in Physics,; Vol. 9(2021)

Artikel i vetenskaplig tidskrift

Several research and industrial organizations are aiming towards Tbps Ethernet and beyond, in order to meet the exponential growth of internet traffic. Novel wideband optical communication systems enable datacenters to constantly improve their data capacity and reduce the energy spent per bit of information. At the same time, very high throughput satellites (V/HTS) used in the ever-expanding cloud of telecommunication satellites make use of the advances in such systems to further their goal of providing internet access to otherwise inaccessible locations.
This work narrates the development of wide-bandwidth (wideband) integrated circuits for high-datarate optical communications, while exploring the unique challenges and merits provided by state-of-the-art Silicon Germanium and Indium Phosphide semiconductor technologies. This work compiles the design and characterization of a number of circuits, which implement the basic functions of such communication systems. The circuits described, improve the energy efficiency of optical communication systems, achieve record high performance, and compensate for the specific application limitations.

Optiska datakablar med multi-Tbit/s kapacitet

Stiftelsen för Strategisk forskning (SSF) (SE13-0014), 2014-03-01 -- 2019-06-30.





Doktorsavhandlingar vid Chalmers tekniska högskola. Ny serie: 4972



Online. In order to join the meeting enter these numbers: 845031


Opponent: Professor Jim Buckwalter, University of California, Santa Barbara, USA

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