Integrated 10-GHz Graphene FET Amplifier
Artikel i vetenskaplig tidskrift, 2021

Graphene has unique electrical and mechanical properties which can pave the way for new types of devices for microwave applications. However, emerging technologies often have problems with yield and still considerable variation in device parameters cause great challenges for circuit design. In this paper, we present the design and development of an integrated graphene FET amplifier addressing this challenge. A representative graphene FET was selected from a set of devices and then the input and output matching circuits were designed using the negative-image technique. The two-finger GFET with a gate length of 0.5  μ m exhibit a typical fT and fmax of 35 GHz and 37 GHz, respectively. The integrated graphene FET amplifier was fabricated on a high-resistivity silicon substrate together with thin film capacitors, airbridges, and spiral inductors. A record high gain of 4.2 dB at 10.6 GHz was measured for a single transistor amplifier stage and agrees well with simulations. These results indicate significant progress towards active microwave circuits based on emerging 2D materials.


integrated circuits


negative-image techniques

field-effect transistors

microwave electronics


Ahmed Hamed

RWTH Aachen University

Muhammad Asad

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Muh-Dey Wei

RWTH Aachen University

Andrei Vorobiev

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Jan Stake

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Renato negra

RWTH Aachen University

IEEE Journal of Microwaves

2692-8388 (ISSN)

Vol. 1 3 821-826

Graphene Core Project 3 (Graphene Flagship)

Europeiska kommissionen (EU) (EC/H2020/881603), 2020-04-01 -- 2023-03-31.


Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik (SO 2010-2017, EI 2018-)






Annan elektroteknik och elektronik



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