Low-loss K-band Photoconductive Switches in SIW Technology
Paper i proceeding, 2021

A design approach for mmWave switches in substrate integrated waveguide (SIW) technology is demonstrated. The switch is based on a photoconductive element (PE) which represents a piece of an intrinsic silicon wafer with light modulated conductivity. Using both dielectric (high-resistivity) and conductive states of the PE, we can design a low-loss mmWave switching element. Owing to the light actuation, the control circuitry of the photoconductive switch (PS) is electrically separated from the high-frequency elements of the device. This solves the bottleneck of conventional mmWave switches based on PIN diodes, MOSFETs, MEMS, etc., which are bulky and lossy due to decoupling filters and matching elements of control and biasing circuits. The proposed approach is generic and can be applied to many mmWave applications within 10 — 100 GHz such as 5G, WiGig, automotive radars, and others.

mmWave

substrate integrated waveguide

photoconductive switch

Författare

Elena Shepeleva

Samsung R&D Institute Russia

Mikhail Makurin

Samsung R&D Institute Russia

Anton Lukyanov

Samsung R&D Institute Russia

Artem Vilenskiy

Chalmers, Elektroteknik, Kommunikations- och antennsystem, Antennsystem

Sergey Chernyshev

Samsung R&D Institute Russia

Marianna Ivashina

Chalmers, Elektroteknik, Kommunikations- och antennsystem, Antennsystem

2020 50th European Microwave Conference, EuMC 2020

538-541 9338236

50th European Microwave Conference 2020 (EuMC 2020)
Utrecht, Netherlands,

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Elektroteknik och elektronik

Annan elektroteknik och elektronik

DOI

10.23919/EuMC48046.2021.9338236

Mer information

Senast uppdaterat

2021-08-03