A Static Frequency Divider in GaN HEMT Technology
Paper i proceeding, 2021

In this work a static frequency divider-by-two based on source coupled logic (SCL), using a 100 nm gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology, is presented. The circuit uses a master-slave (MS) latch topology with an output buffer, and is verified to divide input frequencies from 1–27 GHz. It enables integrated high power, low phase noise GaN HEMT signal sources, which through the divider can be locked to commercial phase locked loops (PLLs).

HEMT

Quasi-static

GaN

Gallium Nitride

Frequency divider

Wideband

Författare

Frida Strömbeck

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Zhongxia Simon He

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Dan Kuylenstierna

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

2021 51st European Microwave Conference, EuMC 2021

309-312
978-2-87487-063-7 (ISBN)

2021 51st European Microwave Conference (EuMC)
London, United Kingdom,

Ämneskategorier

Annan fysik

Signalbehandling

Annan elektroteknik och elektronik

DOI

10.23919/EuMC50147.2022.9784244

Mer information

Senast uppdaterat

2023-04-21