A Static Frequency Divider in GaN HEMT Technology

Paper i proceeding, 2021

In this work a static frequency divider-by-two based on source coupled logic (SCL), using a 100 nm gate length gallium nitride (GaN) high electron mobility transistor (HEMT) technology, is presented. The circuit uses a master-slave (MS) latch topology with an output buffer, and is verified to divide input frequencies from 1–27 GHz. It enables integrated high power, low phase noise GaN HEMT signal sources, which through the divider can be locked to commercial phase locked loops (PLLs).