Toward ultrahigh thermal conductivity graphene films
Artikel i vetenskaplig tidskrift, 2023
With increasing demands of high-performance and functionality, electronics devices generate a great amount of heat. Thus, efficient heat dissipation is crucially needed. Owing to its extremely good thermal conductivity, graphene is an interesting candidate for this purpose. In this paper, a two-step temperature-annealing process to fabricate ultrahigh thermal conductive graphene assembled films (GFs) is proposed. The thermal conductivity of the obtained GFs was as high as 3826 +/- 47 W m(-1) K-1. Extending the time of high-temperature annealing significantly improved the thermal performance of the GF. Structural analyses confirmed that the high thermal conductivity is caused by the large grain size, defect-free stacking, and high flatness, which are beneficial for phonon transmission in the carbon lattice. The turbostratic stacking degree decreased with increasing heat treatment time. However, the increase in the grain size after long heat treatment had a more pronounced effect on the phonon transfer of the GF than that of turbostratic stacking. The developed GFs show great potential for efficient thermal management in electronics devices.
heat treatment time
ultrahigh thermal conductivity
graphene assembled film
Författare
Sihua Guo
Shanghai University
Shujin Chen
Shanghai University
Amos Nkansah
SHT Smart High-Tech
Abdelhafid Zehri
Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial
Murali Murugesan
SHT Smart High-Tech
Yong Zhang
Shanghai University
Yan Zhang
Shanghai University
Chen Yu
Shanghai University
Yifeng Fu
Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial
Markus Enmark
Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial
Jin Chen
Shanghai Ruixi New Material High-Tech Ltd
Xinfeng Wu
Shanghai Maritime University
Wei Yu
Shanghai Polytechnic University
Johan Liu
Shanghai University
Shanghai Polytechnic University
Chalmers, Mikroteknologi och nanovetenskap, Elektronikmaterial
2D Materials
2053-1583 (eISSN)
Vol. 10 1 014002Ämneskategorier
Materialkemi
Nanoteknik
DOI
10.1088/2053-1583/ac9421