Hydrodynamic Simulations of Unitraveling-Carrier Photodiodes
Artikel i vetenskaplig tidskrift, 2007

We present simulated results of a unitraveling-carrier photodiode (UTC-PD) using the hydrodynamic carrier transportation model. A maximum responsivity of 0.25 A/W and a small-signal 3-dB bandwidth of 52 GHz were obtained for a 220-nm-thick InGaAs absorption layer. The physical properties of the UTC-PD have been investigated at different optical injection levels. Modulation of the energy-band profile due to the space charge effect has been observed at high injection level, and an electron velocity overshoot of 3e7 cm/s has been found to effectively delay the onset of space charge effects. Comparisons with reported simulated results using the drift–diffusion model as well as reported experimental results are presented. The results suggest the necessity of using the hydrodynamic transport equations to accurately model the UTC-PD. In addition, it has been corroborated that the photoresponse of the UTC-PD could be improved by incorporating a graded doping profile in the absorption layer.

semiconductor heterojunctions

photodiodes (PDs)

semiconductor device modeling

Hot carriers

Författare

Syed Rahman

Chalmers, Teknisk fysik, Fysikalisk elektronik

Hans Hjelmgren

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Josip Vukusic

Chalmers, Teknisk fysik, Fysikalisk elektronik

Jan Stake

Chalmers, Teknisk fysik, Fysikalisk elektronik

Peter Andrekson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Journal of Quantum Electronics

0018-9197 (ISSN)

Vol. 43 1088-1094

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/JQE.2007.905885