High-Efficiency Ka-Band Active Frequency Doubler MMIC in 150 nm GaN/SiC HEMT Technology
Paper i proceeding, 2023

In this work, the design of an active single-balanced push-push frequency doubler Monolithic Microwave Integrated Circuit (MMIC) in 150 nm depletion mode GaN/SiC HEMT technology is discussed. The design yields a conversion gain of 7.6 dB with a half-power (3-dB) bandwidth spanning from 28.4 GHz up to 31.4 GHz for an input power of 15 dBm. On top of that, the maximum Power-Added Efficiency (PAE) is 10.2% and the harmonic rejection is larger than 27.4 dB at 30 GHz.

Marchand Balun

Monolithic Microwave Integrated Circuit (MMIC)

GaN HEMT Technology

Balanced Frequency Doubler

High-Efficiency

Ka-Band

Författare

Rob Theodoor Wilhelm Anton Vissers

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Gregor Lasser

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings


9798350322422 (ISBN)

2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023
Aveiro, Portugal,

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/INMMIC57329.2023.10321791

Mer information

Senast uppdaterat

2024-01-08