Development of high power HBV multipliers for millimeter wave applications
Paper i proceeding, 2007

We present a high-power frequency tripler for 110 GHz and a quintupler for 200-210 GHz. The tripler (×3), that is based on a single HBV diode, produces 240 mW of output power with a 3-dB bandwidth of 6%. This is the highest output power ever recorded for an HBV based multiplier irrespective of output frequency. The module features an ultra-compact waveguide block design, and a microstrip matching circuit on high-thermal-conductivity AlN to improve the power handling capability. Furthermore, we present an HBV quintupler (×5) that delivers more than 20 mW at 202 GHz.

millimeter wave generation

frequency multiplier

semiconductor device thermal

Heterostructure barrier varactors

terahertz sources

frequency conversion

Författare

Jan Stake

Chalmers, Teknisk fysik, Fysikalisk elektronik

Tomas Bryllert

Chalmers, Teknisk fysik, Fysikalisk elektronik

Josip Vukusic

Chalmers, Teknisk fysik, Fysikalisk elektronik

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN)

Vol. 6739 67390U- 67390U

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1117/12.737592

ISBN

9780819468970