CMOS devices and circuits for microwave and millimetre wave applications
Paper i proceeding, 2005
We present several building blocks for RF
front ends at micro and mm-wave frequencies using 90 nm
CMOS. The designs are 20 GHz single- and 40 GHz double
stage amplifiers with 5.6 and 7.3 dB gain respectively, a 20
GHz resistive mixer with CL = 7.9 dB and IIP3 = 17.5 dBm
plus frequency doublers to 40 and 60 GHz with CL = 15.8
and 15.3 dB respectively. All circuits have been designed
using distributed elements. Both using a 5 metal layer
BEOL process and a 3 metal layer BEOL with post
processing.