CMOS devices and circuits for microwave and millimetre wave applications
Paper i proceeding, 2005
We present several building blocks for RF
front ends at micro and mm-wave frequencies using 90 nm
CMOS. The designs are 20 GHz single- and 40 GHz double
stage amplifiers with 5.6 and 7.3 dB gain respectively, a 20
GHz resistive mixer with CL = 7.9 dB and IIP3 = 17.5 dBm
plus frequency doublers to 40 and 60 GHz with CL = 15.8
and 15.3 dB respectively. All circuits have been designed
using distributed elements. Both using a 5 metal layer
BEOL process and a 3 metal layer BEOL with post
processing.
Författare
Mattias Ferndahl
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Bahar M. Motlagh
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Anowar Masud
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Iltcho Angelov
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
H.-O. Vickes
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
13th European Gallium Arsenide Conference
105-8
Ämneskategorier
Annan elektroteknik och elektronik