Temperature stability of intersubband transitions in AlN/GaN quantum wells
Artikel i vetenskaplig tidskrift, 2010

Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption study, the sample is heated in increments up to 400 degrees C. The self-consistent Schroumldinger-Poisson modeling includes temperature effects of the band gap and the influence of thermal expansion on the piezoelectric field. We find that the intersubband absorption energy decreases only by similar to 6 meV at 400 degrees C relative to its room temperature value.

Poisson equation

piezoelectricity

thermal expansion

Schrodinger equation

photoluminescence

semiconductor quantum wells

gallium compounds

molecular beam epitaxial growth

semiconductor heterojunctions

conduction bands

heat treatment

SCF calculations

III-V semiconductors

aluminium compounds

Författare

Kristian Berland

Chalmers, Teknisk fysik, Elektronikmaterial

Martin Stattin

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Rashid Farivar

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

D. M. S. Sultan

Chalmers, Mikroteknologi och nanovetenskap

Per Hyldgaard

Chalmers, Teknisk fysik, Elektronikmaterial

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Thorvald Andersson

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 97 4 043507- 043507

Styrkeområden

Informations- och kommunikationsteknik

Materialvetenskap

Ämneskategorier

Materialteknik

Annan materialteknik

Den kondenserade materiens fysik

Drivkrafter

Innovation och entreprenörskap

DOI

10.1063/1.3456528

Mer information

Skapat

2017-10-06