140-220-GHz DHBT Detectors
Artikel i vetenskaplig tidskrift, 2013
This paper discusses G-band (140-220 GHz) detectors based on a 250-nm InP-InGaAs-InP double heterojunction bipolar transistor process available from the Teledyne Scientific Company. Two types of detectors are presented-a passive detector where the transistor's base-emitter junction nonlinearity is used, and an active detector, where the transistor transconductance nonlinearity is used for detection. Measurements of transistor noise-power spectrum density at low frequencies is used to model and predict the noise equivalent power (NEP) of the detectors. Analysis of responsivity and noise is presented and compared with measurements. Both configurations are analyzed and compared in terms of noise-voltage, responsivity and NEP. The conclusion that the passive detector offers lower NEP is analyzed and explained.
receivers
responsivity
G-band
flicker noise
radiometers
monolithic microwave integrated circuit (MIMIC)
InP
passive imaging
Double heterojunction bipolar transistor (DHBT)
noise equivalent power (NEP)
power detectors
remote sensing
Författare
Vessen Vassilev
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Rumen Kozhuharov
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
Szhau Lai
Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN) 15579670 (eISSN)
Vol. 61 6 2353-2360 6515147Ämneskategorier
Elektroteknik och elektronik
DOI
10.1109/tmtt.2013.2259250