A Directly Matched PA-Integrated K-band Antenna for Efficient mm-Wave High-Power Generation
Artikel i vetenskaplig tidskrift, 2019

A K-band slot antenna element with integrated GaN (Gallium nitride) power amplifier (PA) is presented. It has been optimized through a circuit-EM co-design methodology to directly match the transistor drain output to its optimal load impedance ( Zopt=17+j46Ω ) while accounting for the over-the-air coupling effects in the vicinity of the transition between the PA and antenna. This obviates the need for using a potentially lossy and bandwidth-limiting output impedance matching network. The measured PA-integrated antenna gain of 15 dBi with a 40% total efficiency at 28 dBm output power agrees well with the theoretically achievable performance targets. The proposed element is compact ( 0.6×0.5×0.3 λ3 ), and thus well-suited to meet the high-performance demands of future emerging beamforming active antenna array applications.

antenna array element

power amplifiers

gallium nitride (GaN)

antenna-circuit co-design

active integrated antennas

K-band

millimeter-wave antennas

Författare

Wan-Chun Liao

Chalmers, Elektroteknik, Kommunikation, Antenner och Optiska Nätverk

Rob Maaskant

Technische Universiteit Eindhoven

Chalmers, Elektroteknik, Kommunikation, Antenner och Optiska Nätverk

Thomas Emanuelsson

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Vessen Vassilev

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Oleg Iupikov

Chalmers, Elektroteknik, Kommunikation, Antenner och Optiska Nätverk

Marianna Ivashina

Chalmers, Elektroteknik, Kommunikation, Antenner och Optiska Nätverk

IEEE Antennas and Wireless Propagation Letters

1536-1225 (ISSN) 15485757 (eISSN)

Vol. 18 11 2389-2393 8811583

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Telekommunikation

Kommunikationssystem

Annan elektroteknik och elektronik

DOI

10.1109/LAWP.2019.2937235

Mer information

Senast uppdaterat

2021-02-25