GaN-based vertical-cavity surface-emitting laser incorporating a TiO2 high-index-contrast grating
Paper i proceeding, 2020
We demonstrate the first electrically injected GaN-based VCSEL with a TiO2 high-contrast grating (HCG) as the top mirror. The TiO2-HCG rested directly on the n-GaN without an airgap for mechanical stability. A VCSEL with an aperture diameter of 10 mu m had a threshold current of 25 mA under pulsed operation at room temperature. Multiple longitudinal modes coexist around 400 nm, each TM-polarized with a linewidth of 0.5 nm (spectral resolution limited). This first demonstration of a TiO2-HCG VCSEL offers a new route to achieve polarization pinning and could also allow additional benefits such as post-growth setting of resonance wavelength.
electrically driven device
TiO2
polarization selectivity
vertical-cavity surface-emitting laser
GaN
VCSEL
high-index-contrast grating
HCG
micro-cavity
Författare
Tsu-Chi Chang
National Chiao Tung University
Seyed Ehsan Hashemi
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Jörgen Bengtsson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Johan Gustavsson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Åsa Haglund
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Tien-Chang Lu
National Chiao Tung University
GALLIUM NITRIDE MATERIALS AND DEVICES XV
0277-786X (ISSN) 1996-756X (eISSN)
Vol. 11280 112800M
Conference on Gallium Nitride Materials and Devices XV
San Francisco, CA, USA,
San Francisco, CA, USA,
Ämneskategorier
Atom- och molekylfysik och optik
Annan fysik
Annan elektroteknik och elektronik
DOI
10.1117/12.2545315