UVC photonic crystal surface-emitting lasers with low-divergent far-fields
Övrigt konferensbidrag, 2023

Photonic crystal surface-emitting lasers (PCSEL) emitting in the ultraviolet (UV) C spectral range are exciting devices due to their low divergence and single-mode emission capable of high output powers as already demonstrated in the infrared [1] and blue spectral range [2]. This is due to their unique design, which incorporates a photonic crystal leading to a large optical gain area. PCSELs are based upon in-plane feedback from the photonic crystal and out-of-plane emission by the diffraction of the modes with zero group velocity at the photonic band edges. We recently demonstrated, to the best of our knowledge, the first UVC PCSEL with an emission at 279 nm. The device structure consists of 3 x 2 nm AlGaN quantum wells (QW) in a 60 nm Al0.70Ga0.30N waveguide and AlN cladding layers. The 140x140 μm large photonic crystal is dry etched into the top AlN cladding layer with a hexagonal lattice consisting of circular holes with a lattice constant of 140 nm and an etch depth of 65 nm, leaving 65 nm between the bottom of the photonic crystals and the first quantum well. Lasing in these PCSELs was achieved by resonant pumping of the QWs by a 266 nm pulsed laser with a spot size of 82 μm at room temperature. The devices exhibit threshold pump power densities from 25 down to 13 MW/cm2 showing a spectral narrowing down to 25 pm. Far-field patterns and band structures were investigated for a range of filling factors (fraction of the surface that is etched) between 10% to 26%, and the far-fields contain emission bands that were not yet reported in PCSELs at longer wavelengths. Changing the filling factor affects the photonic crystal band structure and thereby the optical mode at the Γ-point that will reach threshold first. This feature enables us to intentionally select the lasing mode with the desired far-field pattern. By a proper choice of filling factor, the intensity in the angular emission bands is diminished, resulting in a far-field with a narrow beam divergence of <1°.

UV laser diode

Photonic crystal

surface-emitting lasers

PCSEL

Författare

Dogukan Apaydin

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

lukas Uhlig

Technische Universität Chemnitz

Joachim Ciers

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Hjalmar Andersson

Chalmers, Fysik, Kondenserad materie- och materialteori

Sarina Graupeter

Berlins tekniska universitet

Giulia Cardinali

Berlins tekniska universitet

Tim Wernicke

Berlins tekniska universitet

Michael Kneissl

Berlins tekniska universitet

Philippe Tassin

Chalmers, Fysik, Kondenserad materie- och materialteori

Ulrich Theodor Schwarz

Technische Universität Chemnitz

Åsa Haglund

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

The 14th International Conference on Nitride Semiconductors
Fukuoka, Japan,

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Knut och Alice Wallenbergs Stiftelse (2020.0119), 2021-07-01 -- 2026-06-30.

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Hållbar utveckling

Innovation och entreprenörskap

Styrkeområden

Nanovetenskap och nanoteknik

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Atom- och molekylfysik och optik

Annan fysik

Nanoteknik

Nanoteknik

Infrastruktur

Nanotekniklaboratoriet

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2024-08-20