Chalmers University of Technology

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Showing 9 publications

2024

Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique

Björn Hult, Johan Bergsten, Ragnar Ferrand-Drake Del Castillo et al
IEEE Transactions on Electron Devices (12), p. 7383-7389
Journal article
2024

Characterization of Trapping Effects Related to Carbon Doping Level in AlGaN Back-Barriers for AlGaN/GaN HEMTs

Ragnar Ferrand-Drake Del Castillo, Ding-Yuan Chen, J. T. Chen et al
IEEE Transactions on Electron Devices (6), p. 3596-3602
Journal article
2023

Noise Characterization and Modeling of GaN-HEMTs at Cryogenic Temperatures

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Denis Meledin et al
IEEE Transactions on Microwave Theory and Techniques (5), p. 1923-1931
Journal article
2023

GaN High-Electron-Mobility Transistors with Superconducting Nb Gates for Low-Noise Cryogenic Applications

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Alexey Pavolotskiy et al
Physica Status Solidi (A) Applications and Materials Science (8)
Journal article
2023

Comparison of the low noise performance of GaN HEMTs and MIS-HEMTs at cryogenic temperatures

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Erik Sundin et al
2023 18th European Microwave Integrated Circuits Conference, EuMIC 2023, p. 29-32
Paper in proceeding
2023

Tuning composition in graded AlGaN channel HEMTs toward improved linearity for low-noise radio-frequency amplifiers

A. Papamichail, A. R. Persson, Steffen Richter et al
Applied Physics Letters (15)
Journal article
2022

GaN HEMT with superconducting Nb gates for low noise cryogenic applications

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Alexey Pavolotskiy et al
2022 Compound Semiconductor Week, CSW 2022
Paper in proceeding
2022

A Cryogenic Scalable Small-Signal & Noise Model of GaN HEMTs

Mohamed Aniss Mebarki, Ragnar Ferrand-Drake Del Castillo, Erik Sundin et al
32nd International Symposium of Space Terahertz Technology, ISSTT 2022
Paper in proceeding
2022

Considerations in the development of a gate process module for ultra-scaled GaN HEMTs

Ragnar Ferrand-Drake Del Castillo, Niklas Rorsman
2022 Compound Semiconductor Week, CSW 2022
Paper in proceeding
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Publications for Chalmers University of Technology

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