David Adolph

Post doc at Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics, Microwave Electronics

Showing 11 publications

2018

Vertical Electrical Conductivity of ZnO/GaN Multilayers for Application in Distributed Bragg Reflectors

Filip Hjort, Seyed Ehsan Hashemi, David Adolph et al
IEEE Journal of Quantum Electronics. Vol. 54 (4)
Journal article
2018

Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs with Carbon-Doped Buffers

Johan Bergsten, Mattias Thorsell, David Adolph et al
IEEE Transactions on Electron Devices. Vol. 65 (6), p. 2446-2453
Journal article
2017

Effect of compositional interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors grown on SiC''

Seyed Ehsan Hashemi, Filip Hjort, Martin Stattin et al
Applied Physics Express. Vol. 10 (5), p. 055501-
Journal article
2017

Electrically conductive ZnO/GaN distributed Bragg reflectors grown by hybrid plasma-assisted molecular beam epitaxy

Filip Hjort, Seyed Ehsan Hashemi, David Adolph et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 10104, p. 1010413-1
Paper in proceedings
2017

Nanoscale structuring to improve laser performance

Åsa Haglund, Seyed Ehsan Hashemi, Filip Hjort et al
Paper in proceedings
2016

Impact of O2 flow rate on the growth rate of ZnO(0001) and ZnO(000-1) on GaN by plasma-assisted molecular beam epitaxy

David Adolph, Tommy Ive
Physica Status Solidi (B): Basic Research. Vol. 253 (8), p. 1523-1528
Journal article
2016

Hybrid ZnO/GaN distributed Bragg reflectors grown by plasma-assisted molecular beam epitaxy

David Adolph, Reza R. Zamani, Kimberly A. Dick et al
APL Materials. Vol. 4 (8), p. 086106-
Journal article
2015

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

David Adolph, Tobias Tingberg, Thorvald Andersson et al
Frontiers of Materials Science. Vol. 9 (2), p. 185-191
Journal article
2015

Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

David Adolph, Tobias Tingberg, Tommy Ive
Journal of Crystal Growth. Vol. 426, p. 129-134
Journal article
2014

Nucleation and epitaxial growth of ZnO on GaN(0 0 0 1)

David Adolph, Tommy Ive
Applied Surface Science. Vol. 307, p. 438-443
Journal article

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