Olle Axelsson

Showing 11 publications

2017

Achieving Low-Recovery Time in AlGaN/GaN HEMTs With AlN Interlayer Under Low-Noise Amplifiers Operation

Tongde Huang, Olle Axelsson, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 38 (7), p. 926-928
Journal article
2016

Impact of Trapping Effects on the Recovery Time of GaN Based Low Noise

Olle Axelsson, Niklas Billström, Niklas Rorsman et al
IEEE Microwave and Wireless Components Letters. Vol. 26 (1), p. 31-33
Journal article
2016

Influence on Noise Performance of GaN HEMTs With In Situ and Low-Pressure-Chemical-Vapor-Deposition SiNx Passivation

Tongde Huang, Olle Axelsson, Thi Ngoc Do Thanh et al
IEEE Transactions on Electron Devices. Vol. 63 (10), p. 3887-3892
Review article
2016

Application Relevant Evaluation of Trapping Effects in AlGaN/GaN HEMTs With Fe-Doped Buffer

Olle Axelsson, Sebastian Gustafsson, Hans Hjelmgren et al
IEEE Transactions on Electron Devices. Vol. 63 (1), p. 326-332
Journal article
2015

The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs

Olle Axelsson, Mattias Thorsell, K. Andersson et al
IEEE Transactions on Device and Materials Reliability. Vol. 15 (1), p. 40-46
Journal article
2015

Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx Grown by Low Pressure Chemical Vapor Deposition

Tongde Huang, Anna Malmros, Johan Bergsten et al
IEEE Electron Device Letters. Vol. 36 (6), p. 537-539
Journal article
2015

Low-Pressure-Chemical-Vapor-Deposition SiNx Passivated AlGaN/GaN HEMTs for Power Amplifier Application

Tongde Huang, Olle Axelsson, Anna Malmros et al
2015 Asia-Pacific Microwave Conference (Apmc), Vols 1-3. Vol. 3
Paper in proceeding
2012

Noise temperature of an electronic tuner for noise parameter measurement systems

Olle Axelsson, Mattias Thorsell, Kristoffer Andersson et al
79th ARFTG Microwave Measurement Conference: Non-Linear Measurement Systems, ARFTG 2012, Montreal, QC: 22 June through 22 June 2012, p. Article number 6291197-
Paper in proceeding
2012

Highly linear gallium nitride MMIC LNAs

Olle Axelsson, Kristoffer Andersson
2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, 14 - 17 October 2012
Paper in proceeding
2011

Design and characterization of a highly linear 3 GHz GaN HEMT amplifier

Pirooz Chehrenegar, Olle Axelsson, Jan Grahn et al
2011 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2011. Vienna, 18-19 April 2011
Paper in proceeding
2011

Fabrication and Characterization of Thin-Barrier Al05Ga05N/AlN/GaN HEMTs

Jonathan Felbinger, Martin Fagerlind, Olle Axelsson et al
IEEE Electron Device Letters. Vol. 32 (7), p. 889-891
Journal article

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