Martin Stattin

Showing 20 publications

2018

Towards ultraviolet and blue microcavity lasers

Michael Alexander Bergmann, Filip Hjort, Seyed Ehsan Hashemi et al
Northen Optics and Photonics conference. Vol. 2018
Paper in proceeding
2017

Effect of compositional interlayers on the vertical electrical conductivity of Si-doped AlN/GaN distributed Bragg reflectors grown on SiC''

Seyed Ehsan Hashemi, Filip Hjort, Martin Stattin et al
Applied Physics Express. Vol. 10 (5), p. 055501-
Journal article
2017

Nanoscale structuring to improve laser performance

Åsa Haglund, Seyed Ehsan Hashemi, Filip Hjort et al
Proceedings of the Stanford Chalmers Workshop on Advancing Materials Innovatively. Vol. 2017
Paper in proceeding
2016

Progress and challenges in electrically pumped GaN-based VCSELs

Åsa Haglund, Seyed Ehsan Hashemi, Jörgen Bengtsson et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9892
Paper in proceeding
2014

Triggering of guiding and antiguiding effects in GaN-based VCSELs

Seyed Ehsan Hashemi, Jörgen Bengtsson, Johan Gustavsson et al
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 9001
Paper in proceeding
2014

Analysis of structurally sensitive loss in GaN-based VCSEL cavities and its effect on modal discrimination

Seyed Ehsan Hashemi, Jörgen Bengtsson, Johan Gustavsson et al
Optics Express. Vol. 22 (1), p. 411-426
Journal article
2013

Engineering the Lateral Optical Guiding in Gallium Nitride (GaN)-based Vertical-Cavity Surface-Emitting Laser (VCSEL) Cavities to Reach the Lowest Threshold Gain

Seyed Ehsan Hashemi, Johan Gustavsson, Jörgen Bengtsson et al
Japanese Journal of Applied Physics. Vol. 52 (8 PART 2), p. 08JG04 -
Journal article
2013

ZnO/AlN Clad Waveguides for AlGaN-Based Quantum Cascade Lasers

Martin Stattin, Jörgen Bengtsson, Anders Larsson
Japanese Journal of Applied Physics. Vol. 52 (5), p. 054001 -
Journal article
2013

Metal-Free Graphene as Transparent Electrode for GaN-Based Light-Emitters

Martin Stattin, César Javier Lockhart de la Rosa, Jie Sun et al
Japanese Journal of Applied Physics. Vol. 52 (8 PART 2), p. 08JG05-
Journal article
2013

Elements of AlGaN-Based Light Emitters

Martin Stattin
Doctoral thesis
2012

Graphene as transparent electrode for GaN-based VCSELs

Martin Stattin, César Javier Lockhart de la Rosa, Jie Sun et al
International Workshop on Nitride Semiconductors 2012, October 14-19, 2012, Sapporo, Japan, p. ThP-OD-34-
Conference poster
2012

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Tommy Ive, Kristian Berland, Martin Stattin et al
Japanese Journal of Applied Physics. Vol. 51 (1), p. Article Number: 01AG07 -
Journal article
2012

ZnO/AlN Clad Waveguides for AlGaN-Based Quantum Cascade Lasers

Martin Stattin, Jörgen Bengtsson, Anders Larsson
International Workshop on Nitride Semiconductors 2012, October 14-19, 2012, Sapporo, Japan, p. ThP-OD-35-
Conference poster
2012

Engineering the transverse optical guiding in GaN-based VCSELs to avoid detrimental optical loss

Seyed Ehsan Hashemi, Johan Gustavsson, Jörgen Bengtsson et al
International Workshop on Nitride Semiconductors 2012, October 14-19, 2012, Sapporo, Japan, p. ThP-OD-33
Conference poster
2011

Waveguides for nitride based quantum cascade lasers

Martin Stattin, Kristian Berland, Per Hyldgaard et al
Physica Status Solidi (C) Current Topics in Solid State Physics. Vol. 8 (7-8), p. 2357-2359
Journal article
2011

Towards Novel AlGaN-Based Light Emitters

Martin Stattin
Licentiate thesis
2011

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Thorvald Andersson, Kristian Berland, Rashid Farivar et al
ISPlasma 2011, March 6-9, 2011 Nagoya, Japan
Conference poster
2010

Temperature stability of intersubband transitions in AlN/GaN quantum wells

Kristian Berland, Martin Stattin, Rashid Farivar et al
Applied Physics Letters. Vol. 97 (4), p. 043507-
Journal article
2010

Waveguides for Nitride Based Quantum Cascade Lasers

Martin Stattin, Kristian Berland, Per Hyldgaard et al
International Workshop on Nitride Semiconductors (IWN2010), Tampa, Florida, U.S.A., September 19 – 24, 2010
Conference poster
2010

Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature

Anelia Kakanakova-Georgieva, Daniel Nilsson, Martin Stattin et al
Physica Status Solidi - Rapid Research Letetrs. Vol. 4 (11), p. 311-313
Journal article

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