Transfer of InP-based HBV epitaxy onto borosilicate glass substrate by anodic bonding
Journal article, 2010

We present a new fabrication process for epitaxial transfer of InP-based heterostructure barrier varactor diodes, as high frequency varactor multipliers, onto low-dielectric borosilicate glass substrate, employing anodic bonding. The fabricated diodes on the new host substrate display symmetric electrical characteristics with only minor differences compared to those of the reference devices on the original InP substrate.

III-V SEMICONDUCTORS

GLASS

HBV

EPITAXIAL LIFT-OFF

WAFER BONDING

SUBMILLIMETRE WAVE DEVICES

Author

Mohammad Hadi Tavakoli Dastjerdi

Chalmers, Applied Physics, Physical Electronics

Anke Sanz-Velasco

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Josip Vukusic

Chalmers, Applied Physics, Physical Electronics

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Jan Stake

Chalmers, Applied Physics, Physical Electronics

Electronics Letters

0013-5194 (ISSN) 1350-911X (eISSN)

Vol. 46 14 1013-1014

Areas of Advance

Information and Communication Technology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1049/el.2010.0760

More information

Created

10/7/2017