Transfer of InP-based HBV epitaxy onto borosilicate glass substrate by anodic bonding

Journal article, 2010

We present a new fabrication process for epitaxial transfer of InP-based heterostructure barrier varactor diodes, as high frequency varactor multipliers, onto low-dielectric borosilicate glass substrate, employing anodic bonding. The fabricated diodes on the new host substrate display symmetric electrical characteristics with only minor differences compared to those of the reference devices on the original InP substrate.