InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors on Silicon Substrate
Journal article, 2011
We present the results of a study on epitaxial transfer
of InP-based heterostructure barrier varactor (HBV) materials onto a silicon substrate employing the low-temperature plasma activated bonding technique. The test diodes fabricated on the bonded samples exhibit symmetric electrical characteristics, over the temperature range of 25 ˚C–165 ˚C, and show no degradation compared to previously reported InP-based diodes. Moreover, the onset temperature for debonding, the effective barrier height extracted from the measured data, and the maximum voltage of the HBVs for a current density of 100 A/cm2 were extracted to be 260 ˚C, 0.56 eV, and 10.5 V, respectively.
III–V semiconductors.
Epitaxial transfer
wafer bonding
integrated circuits
millimeter wave devices
Author
Mohammad Hadi Tavakoli Dastjerdi
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Anke Sanz-Velasco
Chalmers, Applied Physics, Electronics Material and Systems
Josip Vukusic
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Erik Kollberg
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Mahdad Sadeghi
Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
IEEE Electron Device Letters
0741-3106 (ISSN) 15580563 (eISSN)
Vol. 32 2 140-142 5660070Areas of Advance
Information and Communication Technology
Infrastructure
Nanofabrication Laboratory
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/LED.2010.2090335