InGaAs/InAlAs/AlAs Heterostructure Barrier Varactors on Silicon Substrate
Journal article, 2011

We present the results of a study on epitaxial transfer of InP-based heterostructure barrier varactor (HBV) materials onto a silicon substrate employing the low-temperature plasma activated bonding technique. The test diodes fabricated on the bonded samples exhibit symmetric electrical characteristics, over the temperature range of 25 ˚C–165 ˚C, and show no degradation compared to previously reported InP-based diodes. Moreover, the onset temperature for debonding, the effective barrier height extracted from the measured data, and the maximum voltage of the HBVs for a current density of 100 A/cm2 were extracted to be 260 ˚C, 0.56 eV, and 10.5 V, respectively.

III–V semiconductors.

Epitaxial transfer

wafer bonding

integrated circuits

millimeter wave devices

Author

Mohammad Hadi Tavakoli Dastjerdi

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Anke Sanz-Velasco

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Erik Kollberg

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Mahdad Sadeghi

Chalmers, Microtechnology and Nanoscience (MC2), Nanofabrication Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE Electron Device Letters

0741-3106 (ISSN)

Vol. 32 2 140-142 5660070

Areas of Advance

Information and Communication Technology

Infrastructure

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/LED.2010.2090335

More information

Created

10/8/2017