Carbon-Nanotube Through-Silicon Via Interconnects for Three-Dimensional Integration
Journal article, 2011

Interconnection of carbon-nanotube (CNT)-filled through-silicon vias is demonstrated through an easy-to-implement process based on mechanical fastening. Direct CNT-to-CNT and CNT-to-Au contacts are realized at the microscale, and their specific contact resistances extracted from electrical measurements are approximately 1.2 × 10 -3 Ω cm 2 and 4.5 × 10 -4 Ω cm 2 , respectively. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Author

Teng Wang

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Kjell Jeppson

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

L. Ye

SHT Smart High-Tech

Johan Liu

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Small

1613-6810 (ISSN) 1613-6829 (eISSN)

Vol. 7 16 2313-2317

Areas of Advance

Production

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1002/smll.201100615

More information

Latest update

3/7/2018 7