10 dB small-signal graphene FET amplifier
Journal article, 2012

Reported is the realisation of a graphene FET microwave amplifier operating at 1 GHz, exhibiting a small-signal power gain of 10 dB and a noise figure of 6.4 dB. The amplifier utilises a matching inductor on the gate yielding a return loss of 20 dB. The design is optimised for maximum gain and the optimum noise figure is extracted by noise modelling and predicted to be close to 1 dB for the intrinsic graphene FET at this frequency. The presented results complement existing graphene FET applications and are promising for future graphene microwave circuits.

microwave amplifiers

noise figure

noise measurements

Graphene FETs

Author

MICHAEL ANDERSSON

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Omid Habibpour

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Josip Vukusic

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Electronics Letters

0013-5194 (ISSN) 1350-911X (eISSN)

Vol. 48 14 861-863

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Infrastructure

Nanofabrication Laboratory

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1049/el.2012.1347

More information

Created

10/7/2017