Wide Bandwidth Terahertz Mixers Based On Graphene FETs
Paper in proceedings, 2019

In this work, resistive fundamental terahertz mixers with wide RF and IF bandwidths based on graphene field-effect transistors have been demonstrated. With an RF frequency range from 220 GHz to 487 GHz, the estimated values of the 3-dB IF bandwidth are 32 GHz and 56 GHz for mixers with GFET gate lengths of 1.2 ?m and 0.6 ?m, respectively. This is competitive with the performance of mixers based on traditional semiconductor technologies.

Graphene

Graphene transistors

Mixers (machinery)

Bandwidth

Terahertz waves

Author

Xinxin Yang

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Kjell Jeppson

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Luca Banszerus

RWTH Aachen University

Christoph Stampfer

RWTH Aachen University

Martin Otto

AMO

Daniel Neumaier

AMO

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

21622027 (ISSN) 21622035 (eISSN)

8873869

44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Paris, France,

Areas of Advance

Information and Communication Technology

Infrastructure

Kollberg Laboratory

Nanofabrication Laboratory

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/IRMMW-THz.2019.8873869

More information

Latest update

3/5/2020 3