Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications
Paper in proceeding, 2015

We present a GaAs-based VCSEL structure, BCB bonded to a Si3N4 waveguide circuit, where one DBR is substituted by a free-standing Si3N4 high-contrast-grating (HCG) reflector realized in the Si3N4 waveguide layer. This design enables solutions for on-chip spectroscopic sensing, and the dense integration of 850-nm WDM data communication transmitters where individual channel wavelengths are set by varying the HCG parameters. RCWA shows that a 300nm-thick Si3N4 HCG with 800nm period and 40% duty cycle reflects strongly (<99%) over a 75nm wavelength range around 850nm. A design with a standing-optical-field minimum at the III-V/airgap interface maximizes the HCG's influence on the VCSEL wavelength, allowing for a 15-nm-wide wavelength setting range with low threshold gain (<1000 cm-1).

silicon photonics

high contrast grating

vertical cavity surface emitting laser

silicon nitride waveguide

integration

Show all persons

Published in

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN) 1996756X (eISSN)

Vol. 9372 p. Art. no. 93720U- art. no 93720U
978-1-62841-462-2 (ISBN)

Categorizing

Subject Categories (SSIF 2011)

Manufacturing, Surface and Joining Technology

Communication Systems

Identifiers

DOI

10.1117/12.2077090

ISBN

978-1-62841-462-2

More information

Latest update

3/6/2018 1