Integration of GaAs-based VCSEL array on SiN platform with HCG reflectors for WDM applications
Paper i proceeding, 2015

We present a GaAs-based VCSEL structure, BCB bonded to a Si3N4 waveguide circuit, where one DBR is substituted by a free-standing Si3N4 high-contrast-grating (HCG) reflector realized in the Si3N4 waveguide layer. This design enables solutions for on-chip spectroscopic sensing, and the dense integration of 850-nm WDM data communication transmitters where individual channel wavelengths are set by varying the HCG parameters. RCWA shows that a 300nm-thick Si3N4 HCG with 800nm period and 40% duty cycle reflects strongly (<99%) over a 75nm wavelength range around 850nm. A design with a standing-optical-field minimum at the III-V/airgap interface maximizes the HCG's influence on the VCSEL wavelength, allowing for a 15-nm-wide wavelength setting range with low threshold gain (<1000 cm-1).

silicon photonics

high contrast grating

vertical cavity surface emitting laser

silicon nitride waveguide

integration

Författare

Sulakshna Kumari

Universiteit Gent

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

R. Wang

Universiteit Gent

Emanuel Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Petter Westbergh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

D. Sanchez

Universiteit Gent

Erik Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Åsa Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Jörgen Bengtsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

N. Le Thomas

Universiteit Gent

Gunther Roelkens

Universiteit Gent

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Roel G. Baets

Universiteit Gent

Proceedings of SPIE - The International Society for Optical Engineering

0277786X (ISSN) 1996756X (eISSN)

Vol. 9372 Art. no. 93720U- 93720U

Ämneskategorier

Bearbetnings-, yt- och fogningsteknik

Kommunikationssystem

DOI

10.1117/12.2077090

ISBN

978-1-62841-462-2

Mer information

Senast uppdaterat

2018-03-06