Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance
Journal article, 2017

The impact of bonding interface thickness on the performance of 850-nm silicon-integrated hybrid-cavity vertical-cavity surface-emitting lasers (HC-VCSELs) is investigated. The HC-VCSEL is constructed by attaching a III–V “half-VCSEL” to a dielectric distributed Bragg reflector on a Si substrate using ultrathin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding. The thickness of the bonding interface, defined by the DVS-BCB layer together with a thin SiO2 layer on the “half-VCSEL,” can be used to tailor the performance, for e.g., maximum output power or modulation speed at a certain temperature, or temperature-stable performance. Here, we demonstrate an optical output power of 2.3 and 0.9 mW, a modulation bandwidth of 10.0 and 6.4 GHz, and error-free data transmission up to 25 and 10 Gb/s at an ambient temperature of 25 and 85 °C, respectively. The thermal impedance is found to be unaffected by the bonding interface thickness.

Heterogeneous integration

large signal modulation

silicon photonics

semiconductor lasers

optical interconnects

vertical-cavity surface-emitting laser (VCSEL)

high-speed modulation


Emanuel Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Sulakshna Kumari

Ghent university

Erik Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Roel G. Baets

Ghent university

Gunther Roelkens

Ghent university

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

IEEE Journal of Selected Topics in Quantum Electronics

1077-260X (ISSN)

Vol. 23 6 1700109- 7762738

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (SO 2010-2017, EI 2018-)

Subject Categories



Nanofabrication Laboratory



More information

Latest update