Silicon-Integrated Hybrid-Cavity 850-nm VCSELs by Adhesive Bonding: Impact of Bonding Interface Thickness on Laser Performance
Artikel i vetenskaplig tidskrift, 2017

The impact of bonding interface thickness on the performance of 850-nm silicon-integrated hybrid-cavity vertical-cavity surface-emitting lasers (HC-VCSELs) is investigated. The HC-VCSEL is constructed by attaching a III–V “half-VCSEL” to a dielectric distributed Bragg reflector on a Si substrate using ultrathin divinylsiloxane-bis-benzocyclobutene (DVS-BCB) adhesive bonding. The thickness of the bonding interface, defined by the DVS-BCB layer together with a thin SiO2 layer on the “half-VCSEL,” can be used to tailor the performance, for e.g., maximum output power or modulation speed at a certain temperature, or temperature-stable performance. Here, we demonstrate an optical output power of 2.3 and 0.9 mW, a modulation bandwidth of 10.0 and 6.4 GHz, and error-free data transmission up to 25 and 10 Gb/s at an ambient temperature of 25 and 85 °C, respectively. The thermal impedance is found to be unaffected by the bonding interface thickness.

Heterogeneous integration

large signal modulation

silicon photonics

semiconductor lasers

optical interconnects

vertical-cavity surface-emitting laser (VCSEL)

high-speed modulation


Emanuel Haglund

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Sulakshna Kumari

Universiteit Gent

Erik Haglund

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Roel G. Baets

Universiteit Gent

Gunther Roelkens

Universiteit Gent

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

IEEE Journal of Selected Topics in Quantum Electronics

1077-260X (ISSN) 15584542 (eISSN)

Vol. 23 6 1700109- 7762738


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