RF-MEMS Tuned GaN HEMT based Cavity Oscillator for X-band
Magazine article, 2017

This letter presents a radio frequency micro-electromechanical systems (RF-MEMS) tuned cavity oscillator for X-band. The active part of the oscillator is implemented in GaN-HEMT MMIC technology. The RF-MEMS-switches are realized on a quartz substrate that is surface mounted on a low loss PCB. The PCB is intruded in an aluminum cavity acting as an electrically moveable wall. For a three-row RF-MEMS setup, a tuning range of 5 % around an oscillation frequency of 10 GHz is demonstrated in measurements. The phase noise is as low as -140 dBc/Hz to -129 dBc/Hz at 100 kHz from the carrier, depending on the configuration of the RF-MEMS.

GaN HEMT

Radio frequency microelectromechanical systems (RF-MEMS)

oscillator

phase noise

Cavity

Author

Mikael Hörberg

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Thomas Emanuelsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per Ligander

Chalmers, Microtechnology and Nanoscience (MC2)

Ericsson AB

Szhau Lai

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Dan Kuylenstierna

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 27 1 46-48

Subject Categories

Signal Processing

DOI

10.1109/LMWC.2016.2629973

More information

Latest update

11/19/2018