RF-MEMS Tuned GaN HEMT based Cavity Oscillator for X-band
Journal article, 2017
This letter presents a radio frequency micro-electromechanical systems (RF-MEMS) tuned cavity oscillator for X-band. The active part of the oscillator is implemented in GaN-HEMT MMIC technology. The RF-MEMS-switches are realized on a quartz substrate that is surface mounted on a low loss PCB. The PCB is intruded in an aluminum cavity acting as an electrically moveable wall. For a three-row RF-MEMS setup, a tuning range of 5 % around an oscillation frequency of 10 GHz is demonstrated in measurements. The phase noise is as low as -140 dBc/Hz to -129 dBc/Hz at 100 kHz from the carrier, depending on the configuration of the RF-MEMS.
phase noise
oscillator
Cavity
Radio frequency microelectromechanical systems (RF-MEMS)
GaN HEMT
Author
Mikael Hörberg
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Thomas Emanuelsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Per Ligander
Chalmers, Microtechnology and Nanoscience (MC2)
Ericsson
Szhau Lai
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Dan Kuylenstierna
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Microwave and Wireless Components Letters
1531-1309 (ISSN) 15581764 (eISSN)
Vol. 27 1 46-48 7797122Subject Categories
Signal Processing
DOI
10.1109/LMWC.2016.2629973