RF-MEMS Tuned GaN HEMT based Cavity Oscillator for X-band
Artikel i vetenskaplig tidskrift, 2017
This letter presents a radio frequency micro-electromechanical systems (RF-MEMS) tuned cavity oscillator for X-band. The active part of the oscillator is implemented in GaN-HEMT MMIC technology. The RF-MEMS-switches are realized on a quartz substrate that is surface mounted on a low loss PCB. The PCB is intruded in an aluminum cavity acting as an electrically moveable wall. For a three-row RF-MEMS setup, a tuning range of 5 % around an oscillation frequency of 10 GHz is demonstrated in measurements. The phase noise is as low as -140 dBc/Hz to -129 dBc/Hz at 100 kHz from the carrier, depending on the configuration of the RF-MEMS.
phase noise
oscillator
Cavity
Radio frequency microelectromechanical systems (RF-MEMS)
GaN HEMT
Författare
Mikael Hörberg
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Thomas Emanuelsson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Per Ligander
Chalmers, Mikroteknologi och nanovetenskap (MC2)
Ericsson AB
Szhau Lai
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Dan Kuylenstierna
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
IEEE Microwave and Wireless Components Letters
1531-1309 (ISSN)
Vol. 27 1 46-48Ämneskategorier
Signalbehandling
DOI
10.1109/LMWC.2016.2629973