RF-MEMS Tuned GaN HEMT based Cavity Oscillator for X-band
Artikel i övriga tidskrifter, 2017

This letter presents a radio frequency micro-electromechanical systems (RF-MEMS) tuned cavity oscillator for X-band. The active part of the oscillator is implemented in GaN-HEMT MMIC technology. The RF-MEMS-switches are realized on a quartz substrate that is surface mounted on a low loss PCB. The PCB is intruded in an aluminum cavity acting as an electrically moveable wall. For a three-row RF-MEMS setup, a tuning range of 5 % around an oscillation frequency of 10 GHz is demonstrated in measurements. The phase noise is as low as -140 dBc/Hz to -129 dBc/Hz at 100 kHz from the carrier, depending on the configuration of the RF-MEMS.

oscillator

Cavity

Radio frequency microelectromechanical systems (RF-MEMS)

phase noise

GaN HEMT

Författare

Mikael Hörberg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Thomas Emanuelsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per Ligander

Ericsson Sweden

Chalmers, Mikroteknologi och nanovetenskap (MC2)

Szhau Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Herbert Zirath

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Dan Kuylenstierna

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

IEEE Microwave and Wireless Components Letters

1531-1309 (ISSN)

Vol. 27 1 46-48

Ämneskategorier

Signalbehandling

DOI

10.1109/LMWC.2016.2629973