1060 nm single-mode vertical-cavity surface-emitting laser operating at 50 Gbit/s data rate
Journal article, 2017
An energy efficient 1060 nm GaAs-based oxide-confined vertical-cavity surface-emitting laser designed for high-speed modulation and singlemode emission has been developed. A record data rate of 50 Gbit/ s at an energy dissipation of 100 fJ/ bit is demonstrated for a device with > 50 dB side-mode-suppression and 0.2 mA threshold current, making this laser a promising light source for long-reach optical interconnects.
frequency 2
phase imbalances
resistors
isolation resistors
45 GHz
frequency 0
compact dual-band five-way Wilkinson power divider
two-section impedance transformers
915 GHz
magnitude imbalances
RF performance
power dividers
Author
Ewa Simpanen
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Johan Gustavsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Erik Haglund
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Emanuel Haglund
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
W. V. Sorin
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
S. Mathai
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
M. R. Tan
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Electronics Letters
0013-5194 (ISSN) 1350-911X (eISSN)
Vol. 53 13 869-870Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1049/el.2017.1165