1060 nm single-mode vertical-cavity surface-emitting laser operating at 50 Gbit/s data rate
Artikel i vetenskaplig tidskrift, 2017

An energy efficient 1060 nm GaAs-based oxide-confined vertical-cavity surface-emitting laser designed for high-speed modulation and singlemode emission has been developed. A record data rate of 50 Gbit/ s at an energy dissipation of 100 fJ/ bit is demonstrated for a device with > 50 dB side-mode-suppression and 0.2 mA threshold current, making this laser a promising light source for long-reach optical interconnects.

resistors

power dividers

45 GHz

compact dual-band five-way Wilkinson power divider

phase imbalances

915 GHz

isolation resistors

frequency 2

magnitude imbalances

two-section impedance transformers

RF performance

frequency 0

Författare

Ewa Simpanen

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Erik Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Emanuel Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

W. V. Sorin

Chalmers University of Technology

S. Mathai

Chalmers University of Technology

M. R. Tan

Chalmers University of Technology

Electronics Letters

0013-5194 (ISSN) 1350-911X (eISSN)

Vol. 53 869-870

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1049/el.2017.1165