Silicon-integrated short-wavelength VCSELs
Paper in proceedings, 2017

GaAs-based hybrid-cavity VCSELs integrated onto silicon by ultra-thin DVS-BCB adhesive bonding are presented. The hybrid-cavity implies that the optical field extends over both the GaAs- and the Si-based parts, which could allow a fraction of the light in the vertical-cavity to be coupled into an in-plane waveguide. Surface-emitting devices are demonstrated at ~860 nm with up to 2.3 mW optical output power and 12 GHz modulation bandwidth, providing error-free large signal data transmission up to 25 Gb/s.

Author

Emanuel Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Sulakshna Kumari

Erik Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Roel G. Baets

Gunther Roelkens

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Other publications Research

Proc. European Semiconductor Laser Workshop

C21-

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Telecommunications

Infrastructure

Nanofabrication Laboratory

More information

Created

12/14/2017

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