Silicon-integrated short-wavelength VCSELs
Paper in proceeding, 2017
GaAs-based hybrid-cavity VCSELs integrated onto silicon by ultra-thin DVS-BCB adhesive bonding are presented. The hybrid-cavity implies that the optical field extends over both the GaAs- and the Si-based parts, which could allow a fraction of the light in the vertical-cavity to be coupled into an in-plane waveguide. Surface-emitting devices are demonstrated at ~860 nm with up to 2.3 mW optical output power and 12 GHz modulation bandwidth, providing error-free large signal data transmission up to 25 Gb/s.
Author
Emanuel Haglund
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Sulakshna Kumari
Erik Haglund
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Johan Gustavsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Roel G. Baets
Gunther Roelkens
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Proc. European Semiconductor Laser Workshop
C21-
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology (SO 2010-2017, EI 2018-)
Subject Categories (SSIF 2011)
Telecommunications
Infrastructure
Nanofabrication Laboratory