Silicon-integrated short-wavelength VCSELs

Paper i proceeding, 2017

GaAs-based hybrid-cavity VCSELs integrated onto silicon by ultra-thin DVS-BCB adhesive bonding are presented. The hybrid-cavity implies that the optical field extends over both the GaAs- and the Si-based parts, which could allow a fraction of the light in the vertical-cavity to be coupled into an in-plane waveguide. Surface-emitting devices are demonstrated at ~860 nm with up to 2.3 mW optical output power and 12 GHz modulation bandwidth, providing error-free large signal data transmission up to 25 Gb/s.