Silicon-integrated short-wavelength VCSELs
Paper i proceeding, 2017

GaAs-based hybrid-cavity VCSELs integrated onto silicon by ultra-thin DVS-BCB adhesive bonding are presented. The hybrid-cavity implies that the optical field extends over both the GaAs- and the Si-based parts, which could allow a fraction of the light in the vertical-cavity to be coupled into an in-plane waveguide. Surface-emitting devices are demonstrated at ~860 nm with up to 2.3 mW optical output power and 12 GHz modulation bandwidth, providing error-free large signal data transmission up to 25 Gb/s.

Författare

Emanuel Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Sulakshna Kumari

Erik Haglund

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Roel G. Baets

Gunther Roelkens

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Proc. European Semiconductor Laser Workshop

C21-

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Nanovetenskap och nanoteknik

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