Understanding noninvasive charge transfer doping of graphene: a comparative study
Journal article, 2018

In this work, we systematically investigate and compare noninvasive doping of chemical vapor deposition graphene with three molecule dopants through spectroscopy and electrical conductivity techniques. Thionyl chloride shows the smallest improvement in conductivity with poor temporal and thermal stability and nitric acid induces the biggest sheet resistance reduction with modified stability. Molybdenum trioxide doping stands out, after thermal annealing, with both causing a significant sheet-resistance reduction and having superior temporal and thermal stability. These properties make it ideal for applications in advanced electronics. Theoretical studies based on the van der Waals density functional method suggest that cluster formation of molybdenum trioxide underpins the significant reduction in sheet resistance, and the stability, that arises after thermal annealing. Our comparative study clarifies charge transfer doping of graphene and brings understanding of the weak-interaction nature of such non-destructive doping of graphene. Our work also shows that we can use weak chemisorption to tailor the electronic properties of graphene, for example, to improve conductivity. This ability open up possibilities for further use of graphene in electronic interconnects, field effect transistors and other systems.

Author

Ankit Nalin Mehta

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Wei Mu

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

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Shanghai University

Murali Murugesan

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

SHT Smart High-Tech

Yang Jiao

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Yifeng Fu

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Per Hyldgaard

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Johan Liu

Shanghai University

Chalmers, Microtechnology and Nanoscience (MC2), Electronics Material and Systems

Journal of Materials Science: Materials in Electronics

0957-4522 (ISSN) 1573-482X (eISSN)

Vol. 29 7 5239-5252

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology

Materials Science

Subject Categories

Inorganic Chemistry

Materials Chemistry

Other Physics Topics

Condensed Matter Physics

Roots

Basic sciences

Infrastructure

C3SE (Chalmers Centre for Computational Science and Engineering)

Driving Forces

Innovation and entrepreneurship

DOI

10.1007/s10854-017-8443-8

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Latest update

8/3/2020 1