Suspended GaN beams and membranes on Si as a platform for waveguide-based THz applications
Journal article, 2018

We demonstrate the suitability of employing suspended GaN beams on a Pi-shaped Si frame for waveguide-based cryogenic THz components and systems. This concept addresses major challenges and provides eased device handling, cryogenic operation, micron-alignment possibilities, high integratability and allows the electrical contacting by using bonding wires. In particular, a balanced hot electron bolometer (HEB) mixer was implemented for frequencies at 1.3 THz with state-of-the-art IF performance, which combines micro-machined all-metal waveguide components in conjunction with a suspended GaN beam. In addition, in order to accomplish a proper design of active or passive components, the accurate knowledge of the effective dielectric constant at THz frequencies is crucial when such membranes are employed. Thus, a direct measurement method based on a resonance structure and an S-parameter measurement between 1 THz and 1.5 THz is also presented.

THz components

HEB

GaN on Si

waveguide

Author

Sascha Krause

Chalmers, Space, Earth and Environment, Onsala Space Observatory, GARD Technology

Vincent Desmaris

Chalmers, Space, Earth and Environment, Onsala Space Observatory, GARD Technology

A. Pavolotsky

Chalmers, Space, Earth and Environment, Onsala Space Observatory, GARD Technology

Denis Meledin

Chalmers, Space, Earth and Environment, Onsala Space Observatory, GARD Technology

Victor Belitsky

Chalmers, Space, Earth and Environment, Onsala Space Observatory, GARD Technology

Journal of Micromechanics and Microengineering

0960-1317 (ISSN)

Vol. 28 10 105007

Subject Categories

Accelerator Physics and Instrumentation

Other Physics Topics

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1088/1361-6439/aacf5c

More information

Latest update

9/6/2018 1