Suspended GaN beams and membranes on Si as a platform for waveguide-based THz applications
Artikel i vetenskaplig tidskrift, 2018

We demonstrate the suitability of employing suspended GaN beams on a Pi-shaped Si frame for waveguide-based cryogenic THz components and systems. This concept addresses major challenges and provides eased device handling, cryogenic operation, micron-alignment possibilities, high integratability and allows the electrical contacting by using bonding wires. In particular, a balanced hot electron bolometer (HEB) mixer was implemented for frequencies at 1.3 THz with state-of-the-art IF performance, which combines micro-machined all-metal waveguide components in conjunction with a suspended GaN beam. In addition, in order to accomplish a proper design of active or passive components, the accurate knowledge of the effective dielectric constant at THz frequencies is crucial when such membranes are employed. Thus, a direct measurement method based on a resonance structure and an S-parameter measurement between 1 THz and 1.5 THz is also presented.

THz components

HEB

GaN on Si

waveguide

Författare

Sascha Krause

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

Vincent Desmaris

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

A. Pavolotsky

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

Denis Meledin

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

Victor Belitsky

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium, GARD teknik

Journal of Micromechanics and Microengineering

0960-1317 (ISSN)

Vol. 28 10 105007

Ämneskategorier

Acceleratorfysik och instrumentering

Annan fysik

Annan elektroteknik och elektronik

DOI

10.1088/1361-6439/aacf5c

Mer information

Senast uppdaterat

2018-09-06