Ultralow 1/f noise in epigraphene devices
Journal article, 2024
We report the lowest recorded levels of 1/ f noise for graphene-based devices, at the level of S V / V 2 = S I / I 2 = 4.4 × 10 − 16 (1/Hz), measured at f = 10 Hz ( S V / V 2 = S I / I 2 < 10 − 16 1/Hz for f > 100 Hz) in large-area epitaxial graphene on silicon carbide (epigraphene) Hall sensors. This performance is made possible through the combination of high material quality, low contact resistance achieved by edge contact fabrication process, homogeneous doping, and stable passivation of the graphene layer. Our study explores the nature of 1/ f noise as a function of carrier density and device geometry and includes data from Hall sensors with device area range spanning over six orders of magnitude, with characteristic device length ranging from L = 1 μm to 1 mm. In optimized graphene Hall sensors, we demonstrate arrays to be a viable route to improve further the magnetic field detection: a simple parallel connection of two devices displays record-high magnetic field sensitivity at room temperature, with minimum detectable magnetic field levels down to B min = 9.5 nT/√Hz. The remarkable low levels of 1/ f noise observed in epigraphene devices hold immense capacity for the design and fabrication of scalable epigraphene-based sensors with exceptional performance.
Author
Naveen Shetty
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Federico Chianese
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Hans He
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
RISE Research Institutes of Sweden
Johanna Huhtasaari
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
S. Ghasemi
Polytechnic University of Catalonia
Kasper Moth-Poulsen
Catalan Institution for Research and Advanced Studies
Polytechnic University of Catalonia
Chalmers, Chemistry and Chemical Engineering, Applied Chemistry
Institute of Material Science of Barcelona (ICMAB)
Sergey Kubatkin
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Thilo Bauch
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Samuel Lara Avila
National Physical Laboratory (NPL)
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 124 9 093503Plasmon-exciton coupling at the attosecond-subnanometer scale: Tailoring strong light-matter interactions at room temperature
Knut and Alice Wallenberg Foundation (2019.0140), 2020-07-01 -- 2025-06-30.
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.1063/5.0185890