Ultralow 1/f noise in epigraphene devices
Artikel i vetenskaplig tidskrift, 2024
We report the lowest recorded levels of 1/ f noise for graphene-based devices, at the level of S V / V 2 = S I / I 2 = 4.4 × 10 − 16 (1/Hz), measured at f = 10 Hz ( S V / V 2 = S I / I 2 < 10 − 16 1/Hz for f > 100 Hz) in large-area epitaxial graphene on silicon carbide (epigraphene) Hall sensors. This performance is made possible through the combination of high material quality, low contact resistance achieved by edge contact fabrication process, homogeneous doping, and stable passivation of the graphene layer. Our study explores the nature of 1/ f noise as a function of carrier density and device geometry and includes data from Hall sensors with device area range spanning over six orders of magnitude, with characteristic device length ranging from L = 1 μm to 1 mm. In optimized graphene Hall sensors, we demonstrate arrays to be a viable route to improve further the magnetic field detection: a simple parallel connection of two devices displays record-high magnetic field sensitivity at room temperature, with minimum detectable magnetic field levels down to B min = 9.5 nT/√Hz. The remarkable low levels of 1/ f noise observed in epigraphene devices hold immense capacity for the design and fabrication of scalable epigraphene-based sensors with exceptional performance.
Författare
Naveen Shetty
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Federico Chianese
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Hans He
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
RISE Research Institutes of Sweden
Johanna Huhtasaari
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
S. Ghasemi
Universitat Politecnica de Catalunya
Kasper Moth-Poulsen
Institucio Catalana de Recerca i Estudis Avancats
Universitat Politecnica de Catalunya
Chalmers, Kemi och kemiteknik, Tillämpad kemi
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
Sergey Kubatkin
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Thilo Bauch
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Samuel Lara Avila
National Physical Laboratory (NPL)
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 124 9 093503Plasmon-exciton coupling at the attosecond-subnanometer scale: Tailoring strong light-matter interactions at room temperature
Knut och Alice Wallenbergs Stiftelse (2019.0140), 2020-07-01 -- 2025-06-30.
Ämneskategorier
Annan elektroteknik och elektronik
Den kondenserade materiens fysik
DOI
10.1063/5.0185890