A 10 W GaN/Si Doherty Power Amplifier Designed for 15 GHz 6G Band with 8 dB Backoff Efficiency
Paper in proceeding, 2025
This paper presents the design and implementation of a 10W GaN-on-Si Doherty Power Amplifier (DPA) for operation in the 15 GHz 6G band. The DPA was fabricated using Infineon's RF GaN-on-Si MMIC process. An experimental (simulation) result shows a peak PAE of 30-37%, and 22-27% PAE at 8 dB backoff, 10dB gain, and 2 GHz bandwidth. Thermally limited CW measurements confirmed high back-off efficiency with 24% PAE at 29 dBm output power at 14 GHz.
6G
Ku Band
Backoff Efficiency
Gallium Nitride on Silicon
Doherty Power Amplifier
Author
Hossein Zaheri
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Rob Theodoor Wilhelm Anton Vissers
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Han Zhou
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Gregor Lasser
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2025 - Proceedings
9798331519605 (ISBN)
2025 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2025
Turin, Italy,
Turin, Italy,
Affordable smart GaN IC solutions as enabler of greener applications (ALL2GaN)
European Commission (EC) (EC/HE/101111890), 2023-05-01 -- 2026-04-30.
VINNOVA (2023-00451), 2023-05-01 -- 2026-04-30.
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Infrastructure
Kollberg Laboratory
Subject Categories (SSIF 2025)
Other Electrical Engineering, Electronic Engineering, Information Engineering
Telecommunications
DOI
10.1109/INMMIC64198.2025.10975657